CGH55030F2【PDF 1/10 页】FET RF HEMT 6GHZ 28V 440166

Subject to change without notice.

www.cree.com/wireless

CGH55030F2 / CGH55030P2

25 W, C-band, Unmatched, GaN HEMT

Cree’s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron

mobility transistor (HEMT) designed specifcally for high effciency, high

gain and wide bandwidth capabilities, which makes the CGH55030F2/

CGH55030P2 ideal for C-band pulsed or CW saturated amplifers. The

transistor is available in both screw-down, fange and solder-down,

pill packages. Based on appropriate external match adjustment, the

CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz.

Package Type: 440196 & 440166

PN: CGH55030P2 & CGH55030F2

–

FEATURES

4.5 to 6.0 GHz Operation

12 dB Small Signal Gain at 5.65 GHz

30 W typical PSAT

60 % Effciency at PSAT

28 V Operation

APPLICATIONS

2-Way Private Radio

Broadband Amplifers

Cellular Infrastructure

Test Instrumentation

Class A, AB Amplifers for Drivers and

Gain Blocks

发布紧急采购，3分钟左右您将得到回复。

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购