1
Subject to change without notice.
www.cree.com/wireless
CGH55030F2 / CGH55030P2
25 W, C-band, Unmatched, GaN HEMT
Cree’s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specifcally for high effciency, high
gain and wide bandwidth capabilities, which makes the CGH55030F2/
CGH55030P2 ideal for C-band pulsed or CW saturated amplifers. The
transistor is available in both screw-down, fange and solder-down,
pill packages. Based on appropriate external match adjustment, the
CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz.
Package Type: 440196 & 440166
PN: CGH55030P2 & CGH55030F2
R
e
v
3
.
2
–
A
p
r
i
l
2
0
1
2
FEATURES
?
4.5 to 6.0 GHz Operation
?
12 dB Small Signal Gain at 5.65 GHz
?
30 W typical PSAT
?
60 % Effciency at PSAT
?
28 V Operation
APPLICATIONS
?
2-Way Private Radio
?
Broadband Amplifers
?
Cellular Infrastructure
?
Test Instrumentation
?
Class A, AB Amplifers for Drivers and
Gain Blocks
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功能描述:RF EVAL HEMT AMPLIFIER RoHS:是 类别:RF/IF 和 RFID >> RF 评估和开发套件，板 系列:- 标准包装:1 系列:- 类型:GPS 接收器 频率:1575MHz 适用于相关产品:- 已供物品:模块 其它名称:SER3796
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制造商:CREE 制造商全称:Cree, Inc 功能描述:25 W, C-band, Unmatched, GaN HEMT
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